Department of Electrical Engineering,
National Taiwan University
Taipei 106, Taiwan
Dr. Chee Wee Liu is currently a Professor of Electrical Engineering, National Taiwan University, and a Senior Researcher of National Nano Device Laboratories, Taiwan. Reflecting the diversity of industrial needs in Taiwan, his research covers Si/Ge/Sn FETs/photonics, 3DIC, IGZO TFTs, and solar cells. Based on his extensive experience on Si/Ge chemical vapor deposition and knowledge of SiGe materials, he achieved a record high electron mobility of 2.4×106 cm2/Vs in strained Si. He pioneered the Ge gate-all-around n/p channel transistors for both inversion and junctionless modes with high performance. He developed the compact models for stress/strain fields around through-Si vias. He also invented the tunneling metal-insulation-semiconductor structures for LEDs and detectors based on group four semiconductors. He found the hydrogen is the key knob to control the IGZO mobility. He also found the Al2O3 passivation effects on CIGS surface. He received B.S. degree in electrical engineering from National Taiwan University in 1985 and Ph.D. degree in electrical engineering from Princeton University in 1994.