Daniele Ielmini

Dipartimento di Elettronica e Informazione,
Politecnico di Milano,
Via Ponzio 34/5, 20133, Milan, Italy

Ielmini Daniele Ielmini is a Professor at the Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Italy. He received the Laurea (cum laude) and Ph.D. in Nuclear Engineering from Politecnico di Milano in 1995 e 2000, respectively. He held visiting positions at Intel Corporation (2006), Stanford University (2006) and the University of Illinois at Urbana-Champaign (2010). His research interests include the modeling and characterization of non-volatile memories, such as nanocrystal memory, charge trap memory, phase change memory (PCM), resistive switching memory (RRAM), and spin-transfer torque magnetic memory (STT-MRAM). In 2016, he coedited the book ‘Resistive switching – from fundamental redox-processes to device applications’ for Wiley-VCH. He authored/coauthored 15 book chapters, more than 250 papers published in international journals and presented at international conferences, and 8 patents. His works received more than 10,000 citations, with an H-index of 58 (Scopus, September 2020). He has served in several Technical Subcommittees of international conferences, such as IEEE-IEDM (2008-2009, 2017-2018), IEEE-IRPS (2006-2008), IEEE-SISC (2008-2010), INFOS (2011-2017) and IEEE-ISCAS (2016-2019). He is Associate Editor of IEEE Trans. Nanotechnology and Semiconductor Science and Technology (IOP). He received the Intel Outstanding Researcher Award in 2013, the ERC Consolidator Grant in 2014, and the IEEE-EDS Paul Rappaport Award in 2015. He is a Fellow of the IEEE.