Politecnico di Milano
Dipartimento di Elettronica e Informazione
Via Ponzio 34/5, 20133, Milan, ITALY
Daniele Ielmini received the Laurea (cum laude) and Ph.D. in Nuclear Engineering from Politecnico di Milano in 1995 e 2000, respectively. In 2000, he joined the Dipartimento di Elettronica e Informazione, Politecnico di Milano, where he is an Associate Professor since 2010. He held visiting positions at Intel Corporation (2006), Stanford University (2006) and the University of Illinois at Urbana-Champaign (2010). He conducts research on emerging nonvolatile memories, such as nanocrystal memory, charge trap memory, phase change memory (PCM) and resistive switching memory (RRAM). He co-edited one book and authored/coauthored 6 book chapters, more than 250 papers published in international journals/conferences, and 4 patents. His works attracted more than 4500 citations, with an h-index of 37 (Scopus, October 2015). He has served in several Technical Subcommittees of international conferences, such as IEEE-International Reliability Physics Symposium (IRPS, 2006-2008), IEEE-Semiconductor Interface Specialist Conference (SISC, 2008-2010), IEEE-International Electron Device Meeting (IEDM, 2008-2009), Insulating Films on Semiconductors (INFOS, 2011-2015) and European Material Research Symposium (EMRS, 2012 and 2014). He was listed in the Highly Cited Researchers by Thomson Reuters in 2015. He received the Intel Outstanding Researcher Award in 2013 and the ERC Consolidator Grant in 2014. He is a Senior Member of the IEEE.