The IEEE Transactions on Nanotechnology (TNANO) seeks original manuscripts for a Special Section following the 2019 edition of the International Electron Devices and Material Symposium (IEDMS 2019).
Nanotechnology in semiconductor electronic devices and materials motivates numerous innovative applications across multiple diverse scientific and industrial sectors. Researchers, Scientists, Engineers, and Practitioner throughout the world are contributing their latest research findings, ideas, developments, and applications in the areas of nanotechnology including electron devices and materials.
To make research presented at the INTERNATIONAL ELECTRON DEVICES & MATERIALS SYMPOSIUM (IEDMS 2019) widely available in expanded form and in a single venue, IEEE Transactions on Nanotechnology (TNANO) is extending a Call For Papers for a Special Issue reflecting the scope of the conference.
Submitted manuscripts will undergo a full peer review process. Submissions are welcome, and all interested IEDMS 2019 participants are encouraged to submit. Authors who are attendees are requested to significantly expand the previous conference version to contain substantial new technical material, as per TNANO and IEEE restrictions on duplicated publications and the competitive acceptance process.
Manuscripts for the TNANO Special Issue/Section must be submitted on-line using the IEEE TNANO manuscript template and “Information for Authors”, via IEEE Manuscript Central https://mc.manuscriptcentral.com/tnano. On submission to TNANO, authors should select the “Special Issue” manuscript type instead of “Regular Paper.”
Submissions that reflect the Conference Scope and current state of the field are welcome in areas including but not limited to:
- Nanotechnology in Compound Semiconductor Materials and Devices
Material growth, high-speed devices, lasers, light-emitting diodes, photodetectors and organic electronics, power devices, associated characterization, modeling, simulation and reliability
- Nanomanufacturing and Nanofabrication in Novel Materials, Large-Area Electronics, and Related Applications
Material preparation, thin-film transistors, 2D semiconductor devices, thermoelectric devices, associated characterization, modeling, simulation and reliability
- Nanoelectronics in Si-Based Processing, Devices and Integration
Novel processes and devices (Si, SiGe, Ge), low power ICs, high-voltage devices, optoelectronic ICs, memories, 3D ICs and integration, associated characterization, modeling, simulation and reliability
- Nano Photonics and Nano Optoelectronics in Photovoltaic Materials/Devices, Novel Device Concept and Applications
Novel nanostructures, energy-con version devices, solar cells, spintronics, MEMS, sensor materials and devices, associated characterization, modeling, simulation and reliability
- Submission of papers: December 20, 2019
- Notification of first review results: March 1, 2020
- Submission of revised papers: May 1, 2020
- Notification of final review results: June 1, 2020
Chao-Sung Lai (Chang Gung University, Taiwan) firstname.lastname@example.org
Chia-Ming Yang (Chang Gung University, Taiwan) email@example.com
Tzung-Fang Guo (National Cheng Kung University, Taiwan) firstname.lastname@example.org
Contact email: email@example.com