At the beginning of each year, T-NANO selects a paper that appeared in the Transactions during the previous calendar year for its Best Paper Award. Candidate papers are nominated by members of the Editorial Board. Evaluation is done by members of the Senior Editors Panel, with criteria including technical merit, originality, potential impact on the field, clarity of presentation, and practical significance for applications.
The winner of the 2017 TNANO Best Paper Award is
“Negative Capacitance for Boosting Tunnel FET performance”
by Masaharu Kobayashi; Kyungmin Jang; Nozomu Ueyama; and Toshiro Hiramoto, Institute of Industrial Science, University of Tokyo, Tokyo, Japan (DOI: 10.1109/TNANO.2017.2658688).
To read the paper go to https://ieeexplore.ieee.org/document/7833118/